Long time aging effect on Be-implanted GaN epitaxial layer
نویسندگان
چکیده
منابع مشابه
Passivation of GaAs surface by ultrathin epitaxial GaN layer
Ultrathin gallium nitride passivation layers grown in situ on near-surface InxGa1 xAs=GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterize...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2019
ISSN: 2158-3226
DOI: 10.1063/1.5081011